Critical analysis of research Evidence Paper Example | Topics and Well Written Essays - 1250 words

Critical analysis of Evidence - Research Paper Example Five research articles were used in order to make a good analysis and conclusion for this particular problem. Each article is likewise critiqued as to its validity and reliability as a research study. Summary: The aim of this study was to find out whether an implementation of a clinical practice guideline would be effective in reducing the development of ventilator-associated pneumonia or VAP (Abbott et al., 2006). The nursing clinical practice guidelines focused on five tasks including the set up of the hospital bed, physical sanitation, and the use of hand protection. The same practice guidelines were actually the result of a collaboration of an educational group who arrived at the instruction which was spread to the hospital personnel. The results of the study revealed that the incidence of VAP in patients had decreased but statistical analysis indicated the change was not significant. Even then, this study encouraged the integration of clinical practices that have been proven through research to reduce VAP cases. Research Question: This particular research focused on four questions (Abbott et al., 2006). The first one pertained to the effect of incorporating the clinical instruction into practice to the number of VAP cases. The second one highlighted the number of VAP cases before and after the integration. The third question delved on the correlation between the implementation of the guideline and the number of VAP cases. The last question intended to look at barriers and guides in the smooth implementation of the guideline. Supporting Literature: There were numerous studies by which this research paper was built upon. One of the most important assumptions are based on the principle that the manner by which a health professional renders service will also affect the way he will integrate the clinical guidelines in his practice (Rogers as cited in Abbott et al.,

Developmental Psychology and Good Quality Activities Essay Example for Free

Developmental Psychology and Good Quality Activities Essay 1.1 It is important to remember that these six areas of learning do not work in isolation but are in fact interlinked. Good quality activities will cover more than one area of development. For example, allowing children to access the outdoors will not only support their physical development, but encourage their communication and exploration of their environment. Where a child experiences a delay in one area, it is likely to limit their learning and development in the other fivea child with cerebral palsy who experiences hand-eye coordination difficulties is likely to find completing a puzzle difficult therefore hindering her problem solving, reasoning and numeracy. It is therefore vital that settings recognise each child’s individual needs and plan holistically in order to help children achieve their full potential across the six areas of learning. Personal, Social and Emotional Development †¢ Dispositions and attitudes †¢ Self confidence and attitudes †¢ Making relationships †¢ Behaviour and self control †¢ Self care †¢ Sense of community Communication, Language and Literacy †¢ Language for communication †¢ Language for thinking †¢ Linking sounds and letters †¢ Reading †¢ Writing †¢ Handwriting Problem Solving, Reasoning and Numeracy †¢ Numbers as labels and for counting †¢ Calculating †¢ Shapes, space and measures Knowledge and Understanding of the World †¢ Exploration and investigation †¢ Designing and making †¢ ICT †¢ Time †¢ Place †¢ Communities Physical Development †¢ Movement and space †¢ Health and bodily awareness †¢ Using equipment and materials Creative Development †¢ Being creative/responding to experiences, expressing and communicating ideas †¢ Exploring media and materials †¢ Creating music and dance †¢ Developing imagination and imaginative play 1.2 We assess and record all the children’s observations and document them in their learning journeys. These get used by the staff to 9show how well the child has developed in their learning, the staff try and put at least 3 observations a month into the journeys. Once the child leaves the setting they can take them onto where ever they are going next. We also use daily diaries what the key workers fill out to show the parents how their day has gone and what they have eating. More important documents e.g. accident forms get filled out and stored away in the office where the manager will assess them and then lock them away for confidentiality. 4.2 Using a topic a child is really interested in can allow for sustained shared thinking it can be talking about something or doing something which encourages conversation like we have done planting with our children this has really captured their imagination the children are talking about what they think seeds are going to grow into what happens as the plants grows, what might the plant produce. We are getting the children to reach conclusions, and explore concepts at a deeper level. The children are thinking about processes and are making connections to things they have already learnt and new information. Processing the information we have given them making them think.

Understand Your Fats and Fiber Essay Example for Free

Understand Your Fats and Fiber Essay Trans fatty acids are seen on ingredient labels as â€Å"partially hydrogenated oils†. Hydrogenated fats are considered as trans fats because these fats have been created in an industrial process. Trans-fatty acids are harmful because they raise the bad or LDL cholesterol levels and lower the HDL or good cholesterol levels in our bodies. They also increase the risk of heart disease and strokes and have also been associated with developing type 2 diabetes. Unsaturated fats are found in fish, nuts, seeds, and oils from plants, polyunsaturated and monounsaturated fats are two unsaturated fats. Unsaturated fats are good for the body because they help lower blood cholesterol levels. Fiber helps normalize bowel movements, maintain bowel integrity and health, lowers blood cholesterol levels, helps control blood sugar levels, aid in weight loss, and may even reduce the risk of colorectal cancer. Lipids are also known as cholesterol that is a component found in blood fats. Dietary fiber can be found fruits, vegetables, whole grains, and legumes. Dietary fibers are commonly classified into two categories, insoluble fiber (don’t dissolve in water), and soluble fiber (those that do dissolve in water). A diet high in fiber decreases the chance of constipation by producing a stool that bulky and easy to pass. High fiber in the diet may lower the risk of developing hemorrhoids, and diverticular disease (small pouches in colon). Soluble fiber that can be found in beans, oats, and flaxseed may help lower bad cholesterol levels and can slow the absorption of sugar and this can reduce the risk of developing type 2 diabetes. Adding more fiber to your diet can also help with weight loss. References Fats 101. (2012).

Silicon Field Effect Transistor (ncSiFET) in BEOL

Silicon Field Effect Transistor (ncSiFET) in BEOL Tremendous research efforts are ongoing in order to implement and add further functionalities to computing compounds in CMOS chips. Thus, a challenge is imposed to compete the existing devices in terms of cost and performance. In this project, I propose a novel and low cost approach for nanocrystalline Silicon Field Effect Transistor (ncSiFET) based memory selector implemented in BEOL. During this thesis, the potentiality of this technology in terms of performance and production cost will be established. Targeted technological applications : Memory selector transistor One of our research group activities in 3IT consists on the development and integration of RRAM with a Complementary Resistive Switch (CRS) planar configuration in the BEOL of CMOS circuit. My research activity will focuses on memory selector fabrication needed to carry out the read operation as subsequent and complementary function. Several technological approaches have been proposed to fulfill this function with different physical concepts, such as diodes, volatile switches, nonlinear devices and transistors. (cf. figure I.1). Owing to the planar configurtion and the nanodamascence fabrication approach of RRAM, our transistor device (ncSiFET) will benefit from the process compatibility, so that it can be implemented in 3D BEOL integration and connected in serial to minimize parasitic leakage current from unselected cells during a read operation,to provide sufficient on-current for the switching of the selected cell and to prevent frequent interference operation and readout errors. The selector and the memory element should be compatible in term of scalability to enable limited leakage current from the unselected memory elements along read and write operations. The requirements for a RRAM selector present several challenges for appropriate integration in a low-cost CMOS-compatible stackable process. A low processing temperature under 400  °C must be respected to enable the compatibility with 3-D integration in BEOL. The implementation of selector devices requiring additional process steps is accompanied with large device area and power dissipation. Moreover, the selector devices can cause a decrease in the current and a slower read operation. A compatibility in terms of in terms of operation polarity (unipolar/bipolar) and switching speed between memory elements and selector devices must be established [2]. Others aspects concerning the reliability such as cycling endurance and variability should be taken in consideration. Required electrical performances A good selector needs to satisfy multiple requirements which are essentially derived from circuit performance aspect. The previously achieved on/off ratio =104 with our (ncSiFET) [3] can be an asset for memory selector applications since it is on a par with many silicon transistor based selectors [4]. This ratio should be improved up to 106, to further enable the operation of large arrays in the architecture. Moreover, a 2.5 ÃŽÂ ¼A/ÃŽÂ ¼m value as on-current in our device [3], which can be further enhanced, fits well with the range of requirement to sufficiently control the memory operation without speed restriction [5]. While threshold voltage needs to be minimized to enable the reduction of the operation leakage. These properties makes the transistor an effective selector as isolation switch and current limiter. A selector should be able to provide enough drive current as needed for SET and RESET operations of the resistive memory cell. Interestingly, a threshold switching se lector device has proved to be efficient for solving the leakage current problem with a low off current Taking all these considerations in account, one can say that (ncSiFET) device owns promising characteristics and relevant potential to be integrated in BEOL for RRAM memory selection applications. In table I.1, we present further characteristics in as speed, temperature and electrical performances that should be also taken in account during the development of our device.Comparison with technological competitor Silicon transistor based selector : The main advantages for this kind of transistors that enable self-compliance are their high ON/OFF ratio with large drive current, appropriate threshold voltage and low power consumption. However, transistor-based selectors present drawbacks in terms of large dimensions and complicated process fabrication [4]. Poly-Si material has been replaced by high quality epitaxial PN regions on crystalline Si, in order to achieve high Ion/Ioff ratio up to 108 and large on current over 10MA/cm2 beneficial for SET/ RESET operation and rectifiying ability [7], but, these unipolar configurations are not compatible with bipolar switching mode resistive memories. The NPN structure has been proposed to overcome the polarity issue with I on /I off ratio of about 4700 [8]. However, the main limit for these technologies is their high process temperature, thus, unsuitable for sub-400 à ¢- ¦C BEOL integration. Metal-oxide schottky diodes: Different compositions of met al and oxides, such as Pt/HfO 2 /ZrO 2 /TiN or Ni/TiO 2 /Ni have been proposed [6]. The conduction mechanism assumed to be based on Schottky emission at the mateal/oxide interfaces [8]. It was demonstrated that (MIM) incorporating thin oxide film can provide non-linear I-V curve. These configurations are compatible with bipolar switching and suitable with 3D-stackable BEOL integration. However, only low drive current density of about 1MA/cm2 is reached. Nonlinear devices: Considering the requirement to achieve both high current at high voltage as well as very small current corresponding to low voltages, nonlinear devices have been proposed. For all the varieties of this category presented in fig.1, the complexity of fabrication process and the material selection remain difficult challenges for large area production and integration [4]. Thin film transistor (TFT): As an example, RRAM (Ti/Oxide stack/Pt) connected with thin film transistor (transparent amorphous oxide semiconductor (TAOS)) architecture demonstrated good results as current limiter with a storage capability controlled by the amplitude of the TFT gate voltage [2]. The TFT as a technology benefit from the reduced temperature, relatively simple and low cost fabrication process. However, carriers mobility in the channel is the main issue that cause significant impact on the electrical properties of the resulting device. The transistor performances are severely affected by high defects density and carrier trap sites which strongly depend on the crystallinity, the quality of silicon thin film (a-Si, Poly-S or nc-Si). This is a common problematic to our ncSi chann el. (ncSiFET): Our proposed transistor technology is based on nanodamascene approach, with a nanocrystalline silicon island as a channel separated from metal S/D by a thin tunnel oxide. A proof of feasibility with promising electrical performance is already demonstrated [3]. The overall process will be performed at low temperature ( The aim of this project is to perform a cost-effective selector device compatible with our resources at 3IT. In this framework, strain effects are quite important for electronic transport in the channel, in other word, switch frequency and the reliability over time. Thus, this important aspect should be taken in account in order to establish the transistor characteristics and to fulfill the requirement for the realization and the application as a memory selector device. One of our project targets is to establish a strain method compatible with high-k/metal top gate configuration. Strained channel should be carefully designed through process conditions and device geometry. Channel residual strain effects Residual strain could be either mechanical/intrinsic during the film growth and upon technological process or thermal due the differences in expansion coefficient between materials or the auto-heating during the device operation. a) On transport properties in conductor channel For crystalline silicon channel, the strain in the channel of nanotransistor leads to the stretching of atoms bonding in silicon layer. The displacement of silicon atoms can reduces the impact of atomic forces that interfere with the electrons movement and weaken scattering phenomena allowing lower resistance and better mobility (cf. fig II.1). Charge carriers can move faster in the strained channel resulting in better conductivity and low power consumption. In fact, stress induces a change and degeneracy in the energy bands level of the silicon atoms, causing an anisotropy in effective mass of electrons. Then, light mass and minimal scattering are the main factors for better mob ility (ÃŽÂ ¼= eà Ã¢â‚¬Å¾/m*) [1]. Due to this anisotropy, the effect of strain depends on its direction with respect to the source-drain current path [2]. On the other hand, the deposition process of nSi-thin film leads to residual strain in the layer (tensile or compressive). For example, it was reported that the conductance of the amorphous material a-Si: H channel in TFT transistor increases with tensile stress while it decrease with compressive one [3].In our nc-SiFET device, channel consists on isolated nc-Si 50nm-length and less than 20nm-thick island deposited and patterned using a combination of e-beam lithography and ICP-etching process. This channel embedded in nanopattern undergo a thermal annealing and Ti metal deposition before (CMP) polishing process leading to confined island from both side of the metal nanowires. Dielectric gate layers (Si 3 N 4 ) or high-k insulator (HfO 2 , Al 2 O 3 ) can be incorporated on the top of the structure in our process followed by g ate deposition. In our project, metals materials can be deposited using evaporation or sputtering techniques, whereas, dielectric layers can be fabricated by PECVD, LPCVD, sputtering or ALD. It is worthy to note that the induced residual strain of each region strongly depend on the choice of the deposition technique, process parameters, layer thickness as well as thermal post treatment. All these process specifications strongly affect the transport properties of the channel. Hence, a careful analysis of the channel mobility based on Hall effect measurements as a function of different process specification should be addressed (figure II.2). A design of experiments would be performed jointly with the process fabrication.In this framework, several local strain techniques have been employed that can resemble our project. It was reported that shallow trench isolation technique -or box isolation technique- consisting on a sequence of trenches patterning to be filled by a deposited materia ls and removal of excess parts using CMP, creates isolation and can exert compressive stress on the channel [5]. Also, SiN capping layers on top of the gate with intrinsic stress can induce strain into MOS channels and enlarge the distance between atoms underneath the gate which enhance the electron mobility [6]. Based on these reported results, we can assume that our sequence of fabrication processes can induce further stress on the nanocrystallline silicon island channel. In order to precisely identify the effects of strain on our (ncSiFET) channel transport, we should take in account the contribution of all the steps that can take part of the channel residual strain in our process i.e nanoscale island embedded in the trench, thermal annealing, chemical mechanical polishing and the effect of capping layer stack. On conduction mechanism between the electrical contacts and active region The strain in the active layer of the channel can induce variations in terms of band gap, electrons effective mass, affinity and the density of states. It is proved that strain can cause a local band gap shrinking and a change in bands form along the channel [7]. Based on Kane model for band to band tunneling, the current is a function of band gap and effective mass change [8]. Hence, we can assume that the induced strain in our island channel can promote the conduction mechanism by direct tunneling through the potential barrier lowering. For our structure, inducing strain in (ncSi) channel can alter the potential barrier, state density and charge population between the thin tunnel oxide / ncSi interface as well as the gate dielectric/ncSi interface in our (ncSiFET) device. The reduction of a-Si island resistivity can enhance the contact resistance between the island and Ti source and drain terminals. I.2 Deposition methods : comparison In our case, the channel is a nanodimensional island deposited in a trench. For such nano-topography, uniform thickness on non-planar surfaces with step conformal coverage, space filling and damage-free process are required. In general, the evolution of stresses in thin films is a dynamic competition between tensile and compression effects during deposition. The strain in the film depends on different criteria such as grains size, micovoids, disorder. species mobility and deposition rate. Stress varies significantly with process conditions. At 3IT, several deposition techniques are available either chemical of physical based processes. We discuss the implications of each techniques on the nanodimensional (nc-Si) island strain as well as distribution and filling aspect. LPCVD: based on heat activation at high temperature (>500 ° C). Low gas pressure reduce gas-phase reaction which lead to low deposition rate and cause particle clusters. LPCVD Si thin film are isotropic and compact, but with poor step coverage [9]. Such high temperature and low deposition rate lead to the relaxation of the ordered film and thus, the annihilation of strain effect. Thermal or e-beam evaporation: requires heating or electron bombardement of source material to reach evaporation and transform into the gaseous phase (low energy atoms ~ 0.1 eV) and then condensed and adsorbed on the substrate surface. The deposited film is characterised by poor uniformity and density with stoichiometrical problem due to the diffference in vapor pressure [9]. This process is better dedicated to thin film rather thick one, and chracterised by small strain effect at the initial stage of the growth [10]. Sputtering: employs the bombardment of a solid target by energetic particles gas ions (1 10 eV). Despite the good uniformity and stochiometry, this process gives rise to dense film with poor directionality [9]. In sputtered films, the ion bombardment of the surface at the initial stage of the film growth may lead to high strain aspect consisting on quite large compressive stresses where a tendency of film edges expansion is contracted back by the substrate [11]. PECVD: species decomposition can be carried out at lower temperatures (around 300  ° C) with high deposition rates and energetic species with high sticking coefficient. This process provides good film quality with conformal aspect and good step coverage [9]. The resulting film at such low temperature and high deposition rate is prevented from relaxation and remains in strain, unlike high temperature process. Moreover, similar to sputtering technique ion bombardement may lead to further strain. The lack of surface diffusion may induce a high voids concentration which induce further strain in the film [10]. The interaction of atoms in the channel amorphous silicon film creates tensile strain, whereas the insertion of atoms causes compressive stresses [12]. Taking all the mentionned specifications, we may confirm the potential of PECVD technique to fabricate for nanodimensional ncSi channel island in nanotrench with interesting strain characteristics. In order to fulfill the cost and performance requirements of (ncSiFET) transistor for memory selector application (vs state of the art), process development and device improvement are demanded. In this project, we pay special attention to physical dimensions and materials properties that determine the characteristics of our devices. Improvements of (ncSiFET) transistor Ces reponses sont a relier avec l opti;isation deja evoque a la question2 Before citing the general strategy for device improvements, we present in figure III.1 the proposed structure accompagned with an overview about the electrical characteristics of (ncSiFET) transistor. *Channel: enlarge the grains size (>80nm), minimize defects density inside the grain => optimization of a-Si deposition + RTA annealing + post-deposition H 2 plasma /Ge incorporation -form narrow channel of about ~100 nm in the range grain size, making sure to avoid the effects of the short channels => EBL patterning of 100nm-box size *Tunnel oxide: longer exposure duration up to 2 h to ambient air + annealing => more compact film with less defects and better stoichiometry *Gate dielectric: -minimize EOT and increase of Cox => implementation of high-K(~20) ALD HfO 2 -reduce defects at high-K ox/ncSi formation for plasma induced layer instead of native SiO x => N 2 pretreatment before ALD + anneal for adhesion and interface species desorption *Top gate: -minimize source/ top Al gate Loverlap =>EBL3 design +alignment *Metal S/D: less tunnel oxide consumption due to metal contact=> replacing Ti with TiN S/D sputtering + annealing for better contact resistance and ohmic contact * Minimize parasitic capacitances (Cgs, Cgd, Cp) (MIM) to enhance switching frequency (f c ) Semi-quantitative aspects *Ion: (better channel mobility, less Dit , optimized strain, lower barrier/contact resistance, better tunnel) Based on coulomb diamond measurements and comsol simulation, replacing the lateral/back gates previously adopted with 86nm SiO 2 as gate dielectric by a top gate with thinner gate dielectric 6[2]. *Ioff: We need to maintain I off range or slightly improve it with minimizing Ntrap or adopt slightly longer channel (>100nm) *S.S: (Small EOT~5nm , higher Cox , reduced gate overlap , better interfaces) An increase of gate stack capacitance Cg allows better gate modulation at low Vgs, high carriers density in the channel, leading to high performance and low power consumption. The gate dielectric capacitance is described as follow whereas the equivalent oxide thickness for high-K dielectric is expressed as. As an estimation an expression for subthreshold swing parameter is given as: Replacing the 86nm SiO 2 (K=3.9) by a 20nm HfO 2 (K~20) as gate dielectric, leads to a EOT=4.87 and an increase of C ox by a factor (~x18). Thus, S.S can reach 250mV/dec. Comparaison a-Si PECVD vs. a-Si LPCVD At 3IT, chemical deposition techniques, mainly LPCVD and PECVD are employed for silicon thin layer growth. It is important for our project to distinguish the relevant film properties, as well as, the implication on device performance for each technique. Electrical Properties In general, amorphous silicon thin films deposited by PECVD at low temperature (200-300 °C) are disordered with a defect density in the range of 1018 cm-3 and hopping based conduction mechanism. The resulting film are usually under stress due to high deposition rate and ion bombardment. Whereas, LPCVD films deposited at relatively high temperature (~600 °C) are more ordered with a lower defect density of about 1015 cm-3 and activation conduction mechanism [4]. Due to high temperature and low deposition rate a relaxation occurs in the film leading to low strain effect. Low field mobility of about 0.1-1cm2 V-1 S-1 in such amorphous material is mainly attributed to punctual defects such dangling bonds and dislocations. Different other allotropic varieties are of interest for our channel mainly polycrystalline and nanocrystalline silicon can be obtained depending on process parameters. On one hand, poly-Si consists on a network of crystalline grains randomly oriented and se parated by grains boundaries which are regions with high defects and dangling bonds concentrations. On the other hand, nc-Si film are formed by crystalline grains of nanoscale size (~ 50 nm-diameter) incorporated in an amorphous matrix with a grain crystalline fraction of up to 60% [5]. These changes in crystalline phase and microstructure imply a significant enhancement in field mobility from 50 up to 300cm2 variation of film microstructure along depth can be manifested, where the interface (nucleation phase) is formed a dominant amorphous phase or very small grains, but, as the growth evolves and the film becomes thicker, the size of the grains increases [6]. This difference in structure between the interface and the bulk of the film may have implications on electrical conduction, since carriers moving through amorphous phases, result in low mobility, whereas, the transport through the large grain give rise to high mobility (figure III.1) For our ncSi channel thin film( Impact on device performances In similar case to our ncSi channel, it was demonstrated, that the main origins of mobility degradation in poly-Si channel are Coulomb scattering due to defects inside the grain (D it ) -point defects or dislocations- or defects at the grain boundaries (Ntrap), as well as the surface roughness at the ncSi / gate oxide interface (Nit). On the one hand, defects inside the grains as the dominant limiting factor on electrons mobility control the on-current (Ion) value. On the other hand, defects at the grain boundaries (Ntrap) generate a Trap-Assisted Tunneling (TAT) mechanism in the (ncSi) channel, which degrades the off-current (Ioff) and the value of (S.S). Moreover, the traps at the interface (Nit) reduce the control of the grid which strongly affects (S.S) and (Ion) [7].

Flowers A Big Part Of Humans Life Marketing Essay

Flowers A Big Part Of Humans Life Marketing Essay Flowers are really a big part of humans life. Their beauty, colour and attractiveness allows us to carry our messages perfectly   get-well soon for our family and sick friends, congratulation messages to a newly promoted friend, sympathy to a grieving group, and to show our feeling to another person. Every party or any occasion is celebrated with flowers.  Or even without an occasion. Recent trends show that many of those who buy flowers buy it for themselves.   Florist shop is a comparitively easy business to stand up and rising. Florist is a kind of business where it did not required big financial  income and its a glooming industry. There are few careers that offer so many advantages. As a florist we are all surrounded with beautiful flower  every day and have a career which has lots of fun and interesting. And this business is not a seasonal business here the work is carry out for a year. EXECUTIVE SUMMARY We Bloomers and Stylers are aiming to provide Frequent Flower Gift Program which will differ from old florists by prepare personal relationships through the use of marketing, technology and innovation by giving a gift program that makes purchasing flowers easier and attractive to the consumers. MISSION The company will  use  sophisticated marketing techniques to identify and serve  an ideal target audience which will  apart from other  older retailers and on-line  florists by giving rapid Flower Gift  Programs with  extra  service (e.g., consumers can select  any precise delivery dates) and  custom floral plans (e.g., consumers can specify colour, scent, flower). Keys to Success Designs should be new and innovative, better quality fresh and nice flower decoration using a variety of  different containers, flowers and other styles. Creating a nice entrance that shows an art gallery, with new, fresh and floral arrangements displayed like art. Communicating with depending consumers through direct e-mail, print some advertisement and an easy  website. CURRENT SITUATION It is thus no wonder that flowers have become big business. The Society of American Florists estimates that the floriculture industry will sell $19 billion in flowers, plants, and floral supplies for 2001. There are about 26,200 retail florist shops  in the United States today making an average of $250,191 in annual sales.  [1]  By looking these figures a person can judge that this industry or a business has an extraordinary growth. Every month there are many occasions so this firm didnt fall down .It is increasing day by day and its a very good market nowadays. INDUSTRY ANALYSIS Industry analysis has a close view on economic factors, social factors and political factors. Frequent Buyer  Program Subscriber 15-60 years of age Married, engaged or in a long-term relationship Quality conscious Decorated home makers The holidays, birthdays and anniversaries are the perfect dates  for people to take as part of a Flower Gift Program. Percentage ranking by retail: S.no Occasions Percentage 1 Valentines day 36% 2 Mothers day 27.4% 3 Christmas 15.1% 4 Thanksgiving day 7.4% 5 Sweetest day 1.2% 6 Grandparents day .09% 7 Fathers day .04% 8 Boss day .02%a Not only these occasions there uncountable days to celebrate something with flowers. To celebrate the marriage flowers are used. So it is used everywhere. All the economic factors lie in this table that what the consumers are required and they target a specific area. Same as with political factors like government is well concerned with the environment and emphasizes to grow more plants which really helps in our florist business. Social factor means the trend in which we are moving like flowers can be used for expressing something, attractiveness, nice essence and many more. So to get a single flower we should get many qualities. This will help our firm to improve and different from others business. So I think that this firm is very much comfortable to have a good competition in the market. PROJECT DISCRIPTION The first is business location, and the location must be in a high-traffic and highly visible area to increase walk-in business. The second issue is delivery. The business must provide consumers with a fast and efficient delivery service. The third important aspect of the business is national exposure. The business must join a florist association that promotes national delivery regardless of geographic location as some florist shops gain as much as 25 percent of their business from people who order  flowers  from outside the service area of the florist (www.entreprenuer.com). Store designing and layout Store design The outer part of a florist shop is estimated to account for the actual fascinate of 30% of all consumers. Very easy, innovative design with attractive and new displays A big interior design with lots of light and extra ordinary lighting to shine and look more attractive flower designs High clear view from the street, as well as looking pleasant at night A quality of distinct floral arrangements. Store policies The company will invest in consumer relationship management software (CRM) to collect consumers information, with their names, address, e-mail address and other required information ( flower likes/dislikes, birthday, colour selection, anniversary). These all information will be used with e-mail and direct mail attempt to build different marketing programs, establish consumers faithfulness. The company will offer a whole exchange policy to build some trust and dependencies with consumers and to maintain withholding, constancy and reliability. Store Location and Time scheduling Our store will be placed at Cannaught place (New Delhi) We plan to open on February 14(Valentines day) and will be providing free sample of flowers to consumers. Free parking should be available for the consumers who will visit the area. OPERATION AND PRODUCTION PLAN It will depend on the nature of our business. I am selling consumer goods, it will be important to make sure i can get those products to your clients at the time you promise. PRODUCTS OFFERED Creative Floral Designs, Using A Varied Mix of Flowers-. The floral arrangement should be natural, original work of art. The company has promise to make each preparation unique and custom-designed based on each consumers needs. Floral arrangements will feature a different range of seasonal flowers. All sample preparation in the store will be there for purchase. innovative Containers- We will select and offer distant vases for the different buyer or for a special reason, as well as reasonable options for timely purchases. .Variety of prices. We will sale a different kind of arrangement sizes, and will always create a those vases which will meet anyones requirement and in their proper budget. Hand-tied Bouquets. For consumers who choose to use their own vases, we should offer hand-tied bouquets. These are the important factors from which consumers will attract. Production involves materials, tools, machines, labour cost. I would preferably buy my material in a wholesale rate and I will produce my own material and it will increase my production as well as my sales of profit .I will buy some equipment like a system which cost 20000rs. A credit card machine of rs5000. And I have decided not to spent more than Rs30000 on this equipment. Other than this an air-condition, on tills of the floor, decoration of the shop. MARKETING PLAN Marketing Objectives We need to establish and to make our reputation as an independent, easy way to buy some flowers and feeling of romance with some loved once. Why should local residents buy from us? It is Easy, handy and suitability. Consumer will experience special shopping qualities. Qualities of the flowers are very good and unique floral decoration. Very fast delivery program that is available. There is a home exchange of the opinion available. Event floral services are available to consumers. It will Support the local dealers. 4.3 Marketing strategies 1.Public Relations Spread around the stores Grand Opening and the ease of availability of services. Publicize our new releases on the local newspapers. 2.Advertisings I will advertise by printing my brochures. I will distribute my Pamphlets and posters. In Newspapers, journals, magazines. 3. Direct Mail/Postcards Develop a list of likely clients for timely communications about vacation specials and regular buyer/gift programs. Provoke more and more users to a particular website that enables them to see sample plans, 4. E-Mail Sending an e-mail to a particular society and then it will make a chain to deliver that e-mail. 5.Marketing Materials Develop a regular look and feel for all corporate security, including: Comment cards collect name, addresses, e-mail, plus feedback on services. One-page brochure describing Frequent Flower Buyer Programs. Stationery business cards, letterhead, envelopes. Gift cards. Packaging develop no-spill packaging to make it easy to transport flowers and use all packaging for branding opportunities. 6.Website Highlight some regular flower program, enable visitors to diary a free phone inquiry and advices, HUMAN RESOURCE PLAN It requires few persons to start this business. First of all owner of the company is the financer and it also have to do lots of work like estimating profits, price policies, designing all the arrangement, pay to suppliers, advertise of the business, handling some kind of complains from the consumer. Basically owner is everything and he/she has to be experienced in taking decisions. Other person that is required is delivery boy who will listen for the consumer requirement and serve the home-deliveries. Other than him a person who have to take care of the plants and flower because flowers has a very short life. And some temporary persons may be required for the important dates when there is a lot of rush in the firm. I will find my employers from the internet and they should have some knowledge of this firm. ASSESMENT OF RISK Starting a new firm we have a serious concern on the risk. A person who is doing this firm must have the experience and if there is no experience then try to gain something about this firm while starting a new business. An entrepreneur did not start any business without the opportunity first of all try to gain some idea and then start. For this research have to done and cover some portions like the place where to set up, windows of opportunity is open. First of all start a business in a small investment then grow it up. Risk came when there are many competitors in the market but what we have to do, try to give some extra facilities, a nice product and in the reasonable cost. This thing reduces the risk in doing business. FINANCIAL PLANS First check out the break even analysis. The cost which we spent is getting profitable. Then project the profit and loss on every product. It also deals with labour cost and cost on the product. Then project every data on the balance sheet. After that compare the ratios with the different year profits and get some idea that the firm in in loss or profit. COST AND PROFITABILITY Startup expenses S.no Contents Amount 1 Showroom on rent 30,000 2 Initial marketing advertising 50,000 3 Stationery 25,000 4 DSL installation service activation 4000 5 Office supplies, giftwrap,packaging 25,000 6 Furniture 50,000 7 Equipment 2,46,000 8 2 Delivery mens 12,000 + 4000(transportation) 9 2 Decorators Designers 20,000 10 Startup inventory (Flowers) 75,000 11 Freshning equipment Freshners 50,000 12 Cleanliness or sweeper 1000 13 Electricity charges 8000 Total Expenditure 6,00,000 Equipments includes: 2 line phone system 10,000 CRS Software 1,70,000 Laptop 30,000 Credit card software 16,000 1 Air conditioner 20,000 CAPITAL INVESTED Planned investment Bank loan 6,00,000 vikrant 1,50,000 Total planned investment 7,50,000 Total planned investment (A) = 7,50,000 Total expenditure (B) = 6,00,000 (A-B) Additional working capital = 1,50,000 YEAR 1 YEAR 2 YEAR 3 PLAN MONTH 1 2 3 CURRENT INTEREST RATE 10.00% 10.00% 10.00% LONG TERM INTEREST RATE 10.00% 10.00% 10.00% TAX RATE 25.42% 25.00% 25.42% OTHERS 0 0 0 Personnel plan YEAR 1 YEAR 2 YEAR 3 MANAGER 200000 250000 400000 EMPLOYEES 300000 325000 360000 TOTAL PEOPLE 5 6 6 TOTAL PAYROLL 500000 575000 760000 Profitability It depends upon contractual terms,by organizing events on special occasions. Providing flowers for decoration purposes in temples and other religious places. Especially in vrindavan. Revenue generated through sales on daily basis. Revenue generated on special occasions BIBLIOGRAPHY 1. http://www.powerhomebiz.com/vol50/florist.htm 2. http://www.bplans.com/florist_business_plan 3. http://www.entrepreneur.com/businessideas/159.html 4. http://www.powerhomebiz.com/guide/cases/christinetoby.htm 5. http://www.paloalto.com/sample_business_plans/florist_business_plan.cfm accessed on 15 Nov 2010

To Kill A Mockingbird: Prejudice In Maycomb :: essays research papers

To Kill A Mockingbird: Prejudice in Maycomb Two major people in To Kill A Mockingbird are prejudged; Boo Radley and Tom Robinson. One man is the victim of prejudice; Atticus Finch. These men are mockingbirds. For a mockingbird has never hurt anyone, and neither has Atticus Finch, Boo Radley, nor Tom Robinson. . Boo Radley is prejudged because he chooses to stay in his domicile. While Tom Robinson is prejudged because of his color. Atticus Finch becomes a victim of prejudice due to his valiancy to help a innocent black man; Tom Robinson. Boo Radley and Tom Robinson and prejudged; but because prejudice is so inclusive, even those who help the â€Å" mockingbirds†, Atticus, become victims of prejudice. Maycomb people gossip about Boo Radley because he chooses to stay in his house, while Tom Robinson is stereotyped by Maycomb because of his skin color. Rumors are spread about these men because most of Maycomb is guilty of prejudice. Boo Radley is generally gossiped about by Miss Stephanie Crawford. Miss Stephanie recounts to Jem about rumors spread about Boo Radley. â€Å"So Jem received much of his information from Miss Stephanie Crawford...†( Lee, TKAM 11 ). Miss Stephanie explains a erroneous rumor about Boo. â€Å"As Mr. Radley passes by, Boo drove the scissors into his parent's leg...† ( 11 ). Tom Robinson is prejudged by many people, some include: Scout, Mr. Gilmer, and Bob Ewell. For example, when Scout says, â€Å"Well, Dill, after all he's just a Negro† (199). Maycomb people are the sin of all prejudice in Maycomb. Boo Radley and Tom Robinson are mockingbirds. Both of these men are victims of prejudice. To take advantage of these men would be a sin, just as it would to kill a mockingbird. â€Å"Mockingbirds don't do one thing but make music for us to enjoy...that's why it's a sin to kill a mockingbird (90).† Tom Robinson is taken advantage of by the Ewell family. Tom had nothing against anybody, especially the Ewells'. He would help Mayella with her chores, and the part of it that made him a mockingbird, is that he did not want anything in return. â€Å" Were u paid for these services...No suh, not after she offered to give me a nickel the first time (191).† What makes Boo Radley a mockingbird is that he has never really never hurt anybody, he minds his own business while watching over his children. The Ewell family and many other people in Maycomb have sinned, distinctively Bob Ewell, because they took advantage and prejudged to innocent men; Tom Robinson and Boo Radley. People who help the mockingbirds also become victims of prejudice.

Responsibility for Eddies Death Essay -- A View from the Bridge Arthu

Responsibility for Eddie's Death In a 'View from the bridge,' Beatrice illustrates her views clearly on recent events by saying on page 61. 'Whatever happened, we all done it, and don't you forget it Catherine.' She is stating that everyone contributed significantly to what has happened in one way or another. On page 4, Alfieri's view of 'settling for half', is different to the way he says it on page 64. On page 64 he says, 'Most of the time we settle for half.' He has differentiated the two words 'now' and 'most'. This is because he has seen Eddie become a victim of his own culture and seen the way he respects the Code of Conduct. Alfieri has concluded from that, that the best way is not to settle for half all the time. But 'Most of the time we settle for half and I like it better.' Both Beatrice and Alfieri have illustrated their views however, their views on recent events contrast to each other significantly. We are introduced to the first key scene where we find Eddie's reaction to Catherine's job offer, 'You can't take no job, why didn't you ask me before taking on a job?' This is clearly showing Eddie's insecurity and doesn't want her to gain any independence; another reason for this reaction is he doesn't want her to get a boyfriend via her new job. This scene has created a sense of tension due to high levels of jealousy surrounding the conversation. Also, Eddie believes that the man should be the provider and the woman does the housework. This prepares the audience for many more scenes similar to this as Eddie's reaction is huge compared to the situation. Therefore, there may be chances of his jealousy taking over and spiralling out of control. When Marco and Rodolpho arrive from Ital... ..., this could have helped diffuse the situation in a way so then at least everyone's true feelings would have been out in the open. Marco was at fault for what happened at the end of the play was he provoked the situation at eh end of the play by saying that he wouldn't give Eddie back his name, and causing a great deal of tension in the household in the boxing scene. Catherine was remotely responsible for Eddie's death at the end of the play by getting involved with Rodolpho too early and against Eddie's will and so it lead to Eddie snitching on Rodolpho and Marco. Rodolpho was responsible as he got involved with Catherine and didn't ask Eddie for permission in the first place, that is regarded as a sensible thing for a gentleman to do. Out of both quotations made by Beatrice and Alfieri I think that Beatrice's quote summed up the truth of the play.